1000V N-Channel Power MOSFET - 1 FAST RECOVERY DIODE AVALANCHE RATED TO-258 HERMETIC PACKAGE BACKSIDE ISOLATION JANTX, JANTXV SCREENING AVAILABLE ORDERING GUIDE Part Number SMF404 Description ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) 1000V N-Channel Power MOSFET TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage (dynamic) Gate-Source Voltage Drain Current, continous Pulse width Tp limited by TJmax Power Dissipation Junction Temperature Range, Operating Junction Temperature Range, Storage Drain Current, pulsed EMAIL: sales@solitrondevic

1000V N-Channel Power MOSFET - 2 ELECTRICAL SPECIFICATIONS (TJ = 25°C unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Off -State Drain Current Gate-Source Leakage Current Drain-Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate to Source Charge Gate to Drain Charge Turn On Delay Time Rx Time Turn Off Delay Time Fail Time Ciss Coss Crss Thermal Resistance BODY DIODE CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Body Diode Forward Voltage Body Diode Reverse Recovery Time Body...

1000V N-Channel Power MOSFET - 3 TYPICAL PERFORMANCE Figure 2. MOSFET Junction to case Transient Thermal Impedance, Zth JC (°C/W) Fig. 1 Maximum Power Dissipation vs.Case Temperature Max Power Dissipation, Ptot (W) Rectangular Pulse Duration (s) Figure 3. Capacitance vs Drain-Source Voltage 10k maximum minimum © 2023 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 901 Sansburys...