
| Parameter | Symbol | Value | Test Conditions |
|---|---|---|---|
| Max D.C. Reverse Voltage | VR | 1200V | - |
| DC Forward Current | IF(avg) | 20A | TC = 65°C |
| Repetitive Peak Forward Current | IFRM | 50A | tp=8.3ms, Sine per leg |
| Non-Repetitive Forward Surge Current | IFSM | 250A | tp=10µs, Pulse per leg |
| Power Dissipation | PD | 40W | - |
| Thermal Resistance | RӨJC | 1.00°C/W | - |
| Maximum Junction Temperature | TJ(max) | +175°C | - |
| Operating Temperature Range | T | -55°C to +200°C | - |
| Storage Temperature Range | TSTG | -55°C to +200°C | - |
| Parameter | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|
| Forward Voltage (IF = 10A per leg, TJ = 25°C) | VF | 1.6 | 1.8 | 2.5 | V |
| Forward Voltage (IF = 10A per leg, TJ = 175°C) | VF | 2.5 | 3.0 | - | V |
| Reverse Current (VR = 1200V per leg, TJ = 25°C) | IRM | 10 | 200 | - | µA |
| Reverse Current (VR = 1200V per leg, TJ = 175°C) | IRM | 20 | 1000 | - | µA |
| Total Capacitive Charge (IF = 10A per leg, di/dt = 500A/µs) | QC | - | 60 | - | nC |
| Total Capacitance (VR = 400V per leg) | C | - | 70 | - | pF |
Dimensions are provided in both inches and millimeters. The package includes three pins with specific functions: Pin 1 is Cathode 1, Pin 2 is Anode 1 / Cathode 2, and Pin 3 is Anode 2.
SchematicThe schematic diagram shows the configuration of the dual Schottky doubler diode with two diodes (D1 and D2) connected in series.
1200V Silicon Carbide Dual Schottky Doubler Diode - 1 KEY FEATURES NO REVERSE RECOVERY / NO FORWARD RECOVERY NEAR ZERO SWITCH LOSS SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE 200°C OPERATING TEMPERATURE ISOLATED CASE HERMETIC PACKAGE TX, TXV AND SPACE LEVEL SCREENING AVAILABLE PARALLEL DEVICES WITHOUT THERMAL RUNAWAY HIGHER EFFECIENCY ORDERING GUIDE SMALLER HEAT SINK IDEAL FOR EXTREME ENVIRONMENT APPLICATIONS 1200V Silicon Carbide Doubler Diode HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise specified) Repetitive Peak Forward Current Non-Repetative Forward Surge Current Power Dissipation Thermal Resistance Maximum Junction Temperature Operating Temperature Range Storage Temperature Range TEST CONDITIONS EMAIL: sales@solitrondev
Open the catalog to page 11200V Silicon Carbide Dual Schottky Doubler Diode - 2 ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted Forward Voltage Reverse Current Total Capacitive Charge Total Capacitance © 2024 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 901 Sansbury Way, West Palm Beach, FL 33411, USA • +1 561-848-4311 • [email protected]
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