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SD11803

Product catalog summary

Overview: The document provides detailed specifications and characteristics of the SD11803, a 1200V 10A Silicon Carbide Schottky Diode, manufactured by Solitron Devices, Inc. It is designed for high-efficiency applications in aerospace, converters, motor drives, and power supplies.

Absolute Maximum Ratings:

Maximum D.C. Reverse Voltage: 1200V
Repetitive Peak Voltage: 1200V
Surge Peak Reverse Voltage: 1200V
DC Forward Current: 10A at 25°C and 125°C
Repetitive Peak Forward Current: 44A at 125°C
Non-Repetitive Forward Surge Current: 43A at 25°C, 33A at 150°C
Power Dissipation: 66W at 25°C, 21W at 125°C
Maximum Case Temperature: 175°C
Maximum Junction Temperature: 225°C
Operating Temperature Range: -55°C to +210°C
Storage Temperature Range: -55°C to +210°C
Lead Temperature for 10 Seconds: 260°C

Key Features:

No reverse or forward recovery
Near zero switch loss
Switching behavior independent of temperature
200°C operating temperature
Isolated case and hermetic package
TX, TXV, and space level screening available

Benefits:

Parallel devices without thermal runaway
Higher efficiency
Smaller heat sink
Ideal for extreme environment applications

Electrical Specifications:

DC Blocking Voltage: 1200V
Forward Voltage: 1.5V at 25°C, 2.1V at 175°C, 1.4V at -55°C
Reverse Current: 1µA at 25°C, 30µA at 175°C
Total Capacitive Charge: 19nC
Total Capacitance: Ranges from 79pF at 100V to 43pF at 1200V
Switching Time: 20ns

Thermal and Mechanical Characteristics:

Thermal Resistance, Junction to Case: 1.7 to 2.3°C/W
Weight: 8.2g

Pin Description:

Pin 1: Cathode
Pin 3: Anode

Schematic and Package Outline: The document includes detailed schematic and package outline drawings with precise measurements for the TO-258-3L package.

Catalog excerpts

olitron SD118031200V 10A Silicon Carbide Schottky Diode - 1 ORDERING GUIDE Part Number SD11803 Description 1200V 10A Silicon Carbide Diode (isolated back side) KEY FEATURES - NO REVERSE RECOVERY / NO FORWARD RECOVERY - NEAR ZERO SWITCH LOSS - SWITCHING BEHAVIOR INDEPENDENT OF TEMPERATURE - 200°C OPERATING TEMPERATURE - ISOLATED CASE - HERMETIC PACKAGE - TX, TXV AND SPACE LEVEL SCREENING AVAILABLE BENEFITS - PARALLEL DEVICES WITHOUT THERMAL RUNAWAY - HIGHER EFFECIENCY - SMALLER HEAT SINK - IDEAL FOR EXTREME ENVIRONMENT APPLICATIONS APPLICATIONS - AEROSPACE - HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES - POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS EMAIL: [email protected]

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TYPICAL PERFORMANCE CURVES FORWARD VOLTAGE vs FORWARD CURRENT REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT (IR) µA CAPACITANCE VS. REVERSE VOLTAGE ( @ 1MHZ, 25°C) 70 90 REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE 60 80 1200 1350 MAXIMUM THERMAL RESISTANCE (junction to free air) MAXIMUM THERMAL RESISTANCE (junction to free air) REVERSE LEAKAGE CURRENT (IR) µA Solitron Devices, Inc. • 901 Sansbury Way, West Palm Beach, FL 33411, USA • +1 561-848-4311 • [email protected]

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SD118031200V 10A Silicon Carbide Schottky Diode - 3 ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted THERMAL AND MECHANICAL CHARACTERISTICS Parameter © 2022 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 901 Sansbury Way, West Palm Beach, FL 33411, USA • +1 561-848-4311 • [email protected]

Open the catalog to page 3

SD11803

SD11803

Catalog excerpts

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