SD11800
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Catalog excerpts

SD11800 1200V Silicon Carbide Schottky Diode - 1 Devices, Inc. ORDERING GUIDE Part Number SD11800 Description 1200V Silicon Carbide Diode (isolated back side) ■ IF @ 125°C 10A ■ SMALL FOOTPRINT ■ CERAMIC ISOLATED BACKSIDE BENEFITS - COMPACT, LIGHTWEIGHT DESIGN - INCREASED POWER DENSITY APPLICATIONS - AEROSPACE - HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES ■ POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS EMAIL: sales@solitrondevices.com

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1200V Silicon Carbide Schottky Diode - 2 TYPICAL PERFORMANCE CURVES FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) 6 8 10 6 8 10 FORWARD CURENT (A) FORWARD CURENT (A) REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT (µA) REVERSE LEAKAGE CURRENT (µA) 600 800 1000 600 800 1000 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) CAPACITANCE VS. REVERSE VOLTAGE 80 70 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407,

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SD11800 1200V Silicon Carbide Schottky Diode - 3 Devices, Inc. ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted THERMAL AND MECHANICAL CHARACTERISTICS This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • sales@solitrondevices.com

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