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SD11800

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SD11800

Product catalog summary

Key Features

VRRM: 1200V
IF @ 125°C: 10A
Small footprint with ceramic isolated backside

Absolute Maximum Ratings

Max D.C. Reverse Voltage (VR): 1200V
Repetitive Peak Voltage (VRRM): 1200V
Surge Peak Reverse Voltage (VRSM): 1200V
DC Blocking Voltage (VDC): 1200V
DC Forward Current (IF(avg)): 10A at 25°C and 125°C
Repetitive Peak Forward Current (IFRM): 44A at 125°C
Non-Repetitive Forward Surge Current (IFSM): 43A at 25°C, 33A at 150°C
Power Dissipation (PD): 16W at 25°C, 19W at 125°C
Maximum Case Temperature (TC(max)): 175°C
Maximum Junction Temperature (TJ(max)): 200°C
Operating Temperature Range: -55°C to +175°C
Storage Temperature Range: -55°C to +175°C
Lead Temperature for 10 Seconds: 260°C

Benefits

Compact, lightweight design
Increased power density

Applications

Aerospace
High efficiency converters & motor drives
Power supplies

Electrical Specifications

DC Blocking Voltage: 1200V typical, 1300V max
Forward Voltage: 1.4V at 25°C, 1.7V at 125°C
Reverse Current: 12µA at 25°C, 80µA at 125°C
Total Capacitive Charge: 19nC
Total Capacitance: Ranges from 77pF to 39pF depending on voltage
Switching Time: 20ns

Thermal and Mechanical Characteristics

Thermal Resistance, Junction to Case: 1.7°C/W
Weight: 5.9g to 6.1g
Mounting Torque: 1.4 to 1.76 N-m

Pin Description

Pin 1: Cathode
Pin 2: Anode

Schematic and Package Outline

The document includes a schematic and detailed package outline for the TO-247-2L package, highlighting dimensions and pin configurations.

Catalog excerpts

SD11800 1200V Silicon Carbide Schottky Diode - 1 Devices, Inc. ORDERING GUIDE Part Number SD11800 Description 1200V Silicon Carbide Diode (isolated back side) ■ IF @ 125°C 10A ■ SMALL FOOTPRINT ■ CERAMIC ISOLATED BACKSIDE BENEFITS - COMPACT, LIGHTWEIGHT DESIGN - INCREASED POWER DENSITY APPLICATIONS - AEROSPACE - HIGH EFFICIENCY CONVERTERS & MOTOR DRIVES ■ POWER SUPPLIES ABSOLUTE MAXIMUM RATINGS EMAIL: [email protected]

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1200V Silicon Carbide Schottky Diode - 2 TYPICAL PERFORMANCE CURVES FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE vs FORWARD CURRENT FORWARD VOLTAGE (V) FORWARD VOLTAGE (V) 6 8 10 6 8 10 FORWARD CURENT (A) FORWARD CURENT (A) REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT vs REVERSE VOLTAGE REVERSE LEAKAGE CURRENT (µA) REVERSE LEAKAGE CURRENT (µA) 600 800 1000 600 800 1000 REVERSE VOLTAGE (V) REVERSE VOLTAGE (V) CAPACITANCE VS. REVERSE VOLTAGE 80 70 Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407,

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SD11800 1200V Silicon Carbide Schottky Diode - 3 Devices, Inc. ELECTRICAL SPECIFICATIONS Typical @ 25°C unless otherwise noted THERMAL AND MECHANICAL CHARACTERISTICS This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 3301 Electronics Way, West Palm Beach, Florida 33407, USA • +1 561-848-4311 • [email protected]

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SD11800

SD11800

Catalog excerpts

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