SD11721
6Pages

1200V SiC N-Channel Power MOSFET - 1 OPTIMIZED PACKAGE WITH SEPARATE DRIVER SOURCE PIN 8MM CREEPAGE DISTANCE BETWEEN DRAIN AND SOURCE BENEFITS HIGH BLOCKING VOLTAGE WITH LOW ON-RESISTANCE HIGH SPEED SWITCHING WITH LOW CAPACITANCE HIGH OPERATING JUNCTION TEMPERATURE CAPABILITY VERY FAST AND ROBUST INTRINSIC BODY DIODE ORDERING GUIDE Part Number SD11721 Description SOLAR INVERTERS 1200V SiC N-Channel Power MOSFET UPS MOTOR DRIVERS HIGH VOLTAGE DC/DC CONVERTERS SWITCH MODE POWER SUPPLIES ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Absolute maximum values Continuous Drain Current Pulsed Drain Current (see fig. 24) Pulse Width Limited by SOA Maximum Power Dissipation Junction Temperature, Operating and Storage Wave soldering only allowed at leads, 1.6mm from case for 10s Solder Temperature THERMAL DATA SYMBOL RӨ(J-C) TEST CONDITIONS Thermal Resistance from Junction to Case EMAIL: sales@solitronde

1200V SiC N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS (TC = 25°C) SYMBOL TEST CONDITIONS Zero Gate Voltage Drain Current Gate Leakage Current Gate Threshold Voltage Static Drain-Source ON Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Coss Stored Energy Total Gate Charge Gate-Source Charge Gatre-Drain Charge Gate Input Resistance Turn-On Switching Energy Turn-Off Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current REVERSE DIODE...

1200V SiC N-Channel Power MOSFET - 3 CHARACTERISTICS Fig 1: Output Characteristics TJ = -55°C Conditions TJ = -55°C Pulsed Fig 4: On-Resistance vs. Junction Temperature Conditions VGS = 20V IGS = 20A Fig 6: On-Resistance vs. Drain Current vs. Junction Temperature Conditions VGS = 20V, pulsed Fig 8: Transfer Characteristic vs. Junction Temperature TJ = 175°C TJ = +25°C Fig 7: On-Resistance vs. Gate-Voltage vs. Junction Temperature Normalized On-Resistance, RDS(on) (mΩ) Fig 5: Normalized On-Resistance vs. Junction Temperature Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, FL...

1200V SiC N-Channel Power MOSFET - 4 CHARACTERISTICS CONT. Fig 9: Threshold Voltage vs. Temperature Fig 10: Body Diode Output Characteristics TJ = -55°C -5 Fig 11: Body Diode Output Characteristics TJ = 25°C -5 Fig 16: Capacitance vs. Drain-Source Voltage Fig 12: Body Diode Output Characteristics TJ = 175°C Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, FL 33411, USA • +1 561-848-4311 • sales@solitron

1200V SiC N-Channel Power MOSFET - 5 CHARACTERISTICS CONT. Fig 17: Output Capacitor Stored Energy vs. Drain-Source Voltage Fig 18: Gate Charge Characteristic @ 25°C Stored Energy, EOSS (µJ) Fig 19: Switching Energy vs. External Gate Resistor, TJ = 25°C Fig 20: Switching Time vs. External Gate Resistor, TJ = 25°C External Gate Resistor, RG(ext) (Ω) Fig 21: Continuous Drain Current vs. Case Temperature Max. Dissipated Power, Ptot (W) Fig 24: Safe Operating Area External Gate Resistor, RG(ext) (Ω) Junction to Case Temperature, Zthjc (°C/W) Fig 22: Max. Power Dissipation vs. Case Temperature...

1200V SiC N-Channel Power MOSFET - 6 OUTLINE DIMENSIONS HEATSINK SURFACE HEATSINK SURFACE D DS SSGS G © 2023 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, FL 33411, USA • +1 561-848-4311 • sales@solitrondevices.com