SD11714
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Catalog excerpts

1200V SiC N-Channel Power MOSFET - 1 AVALANCHE RATED TO-257 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS AC AND DC MOTOR DRIVES Drain-Source Voltage ORDERING GUIDE 1200V SiC N-Channel Power MOSFET Absolute maximum values Gate-Source Voltage Recommended operational values Continuous Drain Current Pulsed Drain Current Pulse Width tp Limited by Tjmax Maximum Power Dissipation ROBOTICS AND SERVO CONTROLS ABSOLUTE MAXIMUM RATINGS (TC = 25°C) JANTX, JANTXV SCREENING AVAILABLE Junction Temperature, Operating and Storage EMAIL: sales@solitrondevices.c

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1200V SiC N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS (TC = 25°C) V(BR)DSS TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Off -State Drain Current Gate-Source Leakage Current Drain-Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current TEST CONDITIONS PW < 10uS, Duty Cycle < 1%, Non-repetitive THERMAL RESISTANCE BODY DIODE RATINGS AND CHARACTERISTICS (Tc = 25°C) SYMBOL lDSS IGSS TEST CONDITIONS TEMPERATURE SENSOR NTC SYMBOL...

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1200V SiC N-Channel Power MOSFET - 3 OUTLINE DIMENSIONS Straight legs 0.420 [10.67] 0.410 [10.41] © 2024 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, Florida 33411, USA • +1 561-848-4311 • sales@solitrondevices.com

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