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700V SiC N-Channel Power MOSFET - 1 ISOLATED BACKSIDE TO-258 HERMETICALLY SEALED PACKAGE MIL-PRF-19500 SCREENING AVAILABLE LOW CAPACITANCES AND LOW GATE CHARGE FAST SWITCHING SPEED DUE TO LOW INTERNAL GATE RESISTANCE (ESR) STABLE OPERATION AT HIGH JUNCTION TEMPERATURE, TJ(MAX) = 175 °C ORDERING GUIDE FAST AND RELIABLE BODY DIODE SUPERIOR AVALANCHE RUGGEDNESS ROHS COMPLIANT ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL Drain-Source Voltage Gate-Source Voltage (dynamic) Continuous Drain Current 700V SiC N-Channel Power MOSFET Pulsed Drain Current * Maximum Power Dissipation Linear Derating Factor * Repetitive rating: pulse width and case temperature limited by maximum junction temperature. THERMAL AND MECHANICAL CHARACTERISTICS SYMBOL RØJC Junction-to-Case Thermal Resistance Operating Junction Temperature Storage Temperature Soldering Temperature for 10s (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Wt Package Weight EMAIL: sales@solitrond

700V SiC N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS, STATIC (TJ = 25°C) SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Threshold Voltage Coefficient ∆VGS(th)/∆TJ IDSS Zero Gate Voltage Drain Current Gate-Source Leakage Current * Pulse test: pulse width < 380 µs, duty cycle < 2%. ELECTRICAL CHARACTERISTICS, DYNAMIC (TJ = 25°C) SYMBOL TEST CONDITIONS Input Capacitance Reverse Transfer Capacitance Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Voltage Fall Time Turn-Off Delay Time Voltage Rise Time Turn-On...

700V SiC N-Channel Power MOSFET - 3 BODY DIODE CHARACTERISTICS (TJ = 25°C) SYMBOL Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current TEST CONDITIONS TYPICAL PERFORMANCE CURVES Fig 1: Drain Current vs. VDS , VGS = 20V Fig 6: Gate Charge Characteristics Fig 5: Normalized On-Resistance vs. Junction Temperature Normalized On-Resistance, RDS(on) (mΩ) Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, Florida 33411, USA • +1 561-848-4311 • sales@s

700V SiC N-Channel Power MOSFET - 4 TYPICAL PERFORMANCE CURVES, CONT. Fig 7: Capacitance vs. Drain-Source Voltage Fig 8: Pulsed Drain Current vs. Gate Source Voltage Pulsed Drain Current, IDS (A) Fig 12: Switching Energy Off vs. Drain Source Voltage Rg = 4Ω Fig 13: Switching Energy vs. Gate Resistance ID = 50A Fig 14: Switching Energy vs. Junction Temperature ID = 50A, Rg = 4Ω Fig 11: Switching Energy On vs. Drain Source Voltage Rg = 4Ω Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, Florida 33411, USA • +1 561-848-4311 • sale

700V SiC N-Channel Power MOSFET - 5 TYPICAL PERFORMANCE CURVES, CONT. Fig 15: Switching Energy On vs. Drain Source Voltage Fig 17: Switching Energy vs. Gate Resistance Fig 18: Threshold Voltage vs. Junction Temperature VGS = VDS, ID = 4mA Threshold Voltage, VGS(th) (V) Fig 16: Switching Energy Off vs. Drain Source Voltage Not characterized for linear user RDS(on) Limit Fig 19: Safe Operating Area Junction to Case Temperature, Zthjc (°C/W) Single Pulse OUTLINE DIMENSIONS, IN INCHES (MM) 0.694 [17.63] 0.684 [17.37] © 2023 Solitron Devices, Inc. This document is believed to be correct at the...