1200V SiC N-Channel Power MOSFET - 1 AVALANCHE RATED TO-258 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS ORDERING GUIDE ROBOTICS AND SERVO CONTROLS ABSOLUTE MAXIMIMUM RATINGS (TC = 25°C) SYMBOL TEST CONDITIONS Drain-Source Voltage 1200V SiC N-Channel Power MOSFET Absolute maximum values Gate-Source Voltage Recommended operational values Continuous Drain Current Pulsed Drain Current Pulse Width tp Limited by Tjmax Maximum Power Dissipation Junction Temperature, Operating and Storage EMAIL: [email protected]

1200V SiC N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS (TC = 25°C) SYMBOL V(BR)DSS TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Off -State Drain Current Gate-Source Leakage Current Drain-Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance BODY DIODE RATINGS AND CHARACTERISTICS (Tc = 25°C) SYMBOL TEST CONDITIONS Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current PW < 10uS, Duty Cycle < 1%, Non-repetitive THERMAL RESISTANCE SYMBOL TEST CONDITIONS TEMPERATURE SENSOR NTC SYMBOL...

1200V SiC N-Channel Power MOSFET - 3 CHARACTERISTICS Fig 1: Output Characteristics TJ = -55°C Conditions TJ = -55°C Fig 6: Normalized On-Resistance vs. Junction Temperature Conditions VGS = 15V Fig 4:On-Resistance vs. Drain Current vs. Junction Temperature Fig 5: On-Resistance vs. Junction Temperature vs. Gate Voltage On-Resistance, RDS(on) (mOhms) On-Resistance, RDS(on) (mOhms) Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, Florida 33411, USA • +1 561-848-4311 • sales@solitronde

1200V SiC N-Channel Power MOSFET - 4 CHARACTERISTICS, CONT. Fig 7: Transfer Characteristic vs. Junction Temperature Conditions VDS = 20V Fig 8: Body Diode Characteristic vs. Junction Temperature -6.0 Fig 9: Threshold Voltage vs. Junction Temperature Fig 10: Maximum Power Dissipation vs. Case Temperature Fig 12: Capacitance vs. Drain-Source Voltage Fig 13: MOSFET Junction-Case Transient Thermal Impedance, Zth JC (°C/W) RTZthx Termal Impedance (C/W) Drain-Source Continuous Current, IDS (A) Fig 11: Continuous Drain Current Derating vs. Case Temperature Rectangular Pulse Duration (s) Solitron Devices,...

1200V SiC N-Channel Power MOSFET - 5 OUTLINE DIMENSIONS Straight legs DIA. 0.165 [4.19] 0.155 [3.94] © 2024 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 901 Sansburys Way, West Palm Beach, Florida 33411, USA • +1 561-848-4311 • [email protected]