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SiC Half-Bridge Hermetic Power Module - 1 VDS = 1200V RDSon = 22mΩ ID = 95A @ TC = 25°C • HIGH SPEED SWITCHING W/ LOW CAPACITANCE Temp. Monitoring Temp. Monitoring • REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE • ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK • ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY • HIGH JUNCTION TEMPERATURE OPERATION • LOW JUNCTION TO CASE THERMAL RESISTANCE • REDUCED THERMAL REQUIREMENTS AND SYSTEM COST • INTEGRATED NTC TEMPERATURE SENSOR • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION FEATURES & BENEFITS

SiC Half-Bridge Hermetic Power Module - 2 ABSOLUTE MAXIMIMUM RATINGS (Ta = 25°C) Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Junction Temperature, Operating and Storage ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL V(BR)DSS lDSS IGSS+ IGSS- TEST CONDITIONS Drain-Source Breakdown Voltage Off -State Drain Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On-state Resistance 3 Gate Input Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance, Energy Related Turn-On Delay Time 3...

SiC Half-Bridge Hermetic Power Module - 3 BODY DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Inverse Diode Continuous, Forward Current Inverse Diode Direct Current, Pulsed Diode Forward Voltage 3 Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current 3 TEST CONDITIONS PACKAGE OUTLINE - dimensions in inches (mm) © 2024 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without...