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SD11487

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SD11487

Product catalog summary

Features & Benefits:

Superior system efficiency due to low switching and conduction losses of SiC.
Outstanding power conversion efficiency at high frequency operation.
High-speed switching with low capacitance.
Reduced parasitic inductance and capacitance.
Real Kelvin source connection for stable gate drive.
Isolated backside for direct mount to heatsink.
ALN substrate and CuMo baseplate for thermal conductivity.
High junction temperature operation.
Low junction to case thermal resistance.
Reduced thermal requirements and system cost.
Integrated NTC temperature sensor.

Specifications:

V_DS = 1200V
R_DSon = 22mΩ
I_D = 95A @ T_C = 25°C

Pin Connections:

1: S1
2: G1, G2
3-4: Temp. Monitoring
5: G4, G4
6: S2
7-8: AC
9-10: N
11-12: P

Absolute Maximum Ratings (T_a = 25°C):

Drain-Source Voltage (V_DSS): 1200V
Continuous Drain Current (I_D): 95A
Pulsed Drain Current (I_{D, pulse}): 237A
Gate-Source Voltage (V_GSS): -4 to 22V
Junction Temperature (T_J, T_STG): -55 to +175°C

Electrical Characteristics (T_a = 25°C):

Drain-Source Breakdown Voltage (V(BR)_DSS): 1200V
Off-State Drain Current (I_DSS): 1-10µA
Gate-Source Leakage Current (I_GSS): ±100nA
Gate Threshold Voltage (V_GS(th)): 2.7-5.6V
Drain-Source On-state Resistance (R_DS(on)): 22-33mΩ
Gate Input Resistance (R_G): 4Ω
Transconductance (g_fs): 14.2S
Input Capacitance (C_iss): 2879pF
Output Capacitance (C_oss): 237pF
Reverse Transfer Capacitance (C_rss): 108pF
Effective Output Capacitance (C_o(er)): 213pF
Turn-On Delay Time (t_d(on)): 29ns
Rise Time (t_r): 44ns
Turn-Off Delay Time (t_d(off)): 67ns
Fall Time (t_f): 28ns
Turn-On Switching Loss (E_on): 632µJ
Turn-Off Switching Loss (E_off): 243µJ

Gate Charge Characteristics (T_a = 25°C):

Total Gate Charge (Q_g): 178nC
Gate-Source Charge (Q_gs): 40nC
Gate-Drain Charge (Q_gd): 80nC
Gate Plateau Voltage (V_plateau): 9.6V

Body Diode Ratings and Characteristics (T_a = 25°C):

Inverse Diode Continuous, Forward Current (I_S): 95A
Inverse Diode Direct Current, Pulsed (I_SM): 237A
Diode Forward Voltage (V_SD): 3.2V
Reverse Recovery Time (t_rr): 28ns
Reverse Recovery Charge (Q_rr): 475nC
Peak Reverse Recovery Current (I_rrm): 12A

Package Outline:

Dimensions are provided in inches and millimeters for precise installation and integration.

Note: Specifications are subject to change without notice. Solitron Devices accepts no responsibility for errors or inaccuracies.

Catalog excerpts

SiC Half-Bridge Hermetic Power Module - 1 VDS = 1200V RDSon = 22mΩ ID = 95A @ TC = 25°C • HIGH SPEED SWITCHING W/ LOW CAPACITANCE Temp. Monitoring Temp. Monitoring • REAL KELVIN SOURCE CONNECTION FOR STABLE GATE DRIVE • ISOLATED BACKSIDE FOR DIRECT MOUNT TO HEATSINK • ALN SUBSTRATE AND CUMO BASEPLATE FOR THERMAL CONDUCTIVITY • HIGH JUNCTION TEMPERATURE OPERATION • LOW JUNCTION TO CASE THERMAL RESISTANCE • REDUCED THERMAL REQUIREMENTS AND SYSTEM COST • INTEGRATED NTC TEMPERATURE SENSOR • REDUCED PARASITIC INDUCTANCE AND CAPACITANCE • SUPERIOR SYSTEM EFFICIENCY DUE TO LOW SWITCHING AND CONDUCTIONS LOSSES OF SIC • OUTSTANDING POWER CONVERSION EFFICIENCY AT HIGH FREQUENCY OPERATION FEATURES & BENEFITS

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SiC Half-Bridge Hermetic Power Module - 2 ABSOLUTE MAXIMIMUM RATINGS (Ta = 25°C) Drain-Source Voltage Continuous Drain Current Pulsed Drain Current Gate-Source Voltage Junction Temperature, Operating and Storage ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL V(BR)DSS lDSS IGSS+ IGSS- TEST CONDITIONS Drain-Source Breakdown Voltage Off -State Drain Current Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On-state Resistance 3 Gate Input Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance, Energy Related Turn-On Delay Time 3 Turn-Off...

Open the catalog to page 2

SiC Half-Bridge Hermetic Power Module - 3 BODY DIODE RATINGS AND CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC Inverse Diode Continuous, Forward Current Inverse Diode Direct Current, Pulsed Diode Forward Voltage 3 Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current 3 TEST CONDITIONS PACKAGE OUTLINE - dimensions in inches (mm) © 2024 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice....

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SD11487

SD11487

Catalog excerpts

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