SD11461
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N-Channel Power MOSFET - 1 KEY FEATURES LOW THERMAL RESISTANCE OPTIMIZED FOR FAST SWITCHING TO-258 OR TO-254 3L PACKAGE HERMETICALLY SEALED, ISOLATED PACKAGE JANTX, JANTXV SCREENING AVAILABLE APPLICATIONS SWITCH-MODE AND RESONANT-MODE POWER SUPPLIES DC-DC CONVERTERS PFC CIRCUITS ORDERING GUIDE AC AND DC MOTOR DRIVES ROBOTICS AND SERVO CONTROLS ABSOLUTE MAXIMUM RATINGS (TC = 25°C) SYMBOL Part Number 100V N-Channel Power MOSFET TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Maximum Power Dissipation Junction Temperature, Operating and Storage Thermal Resistance, junction-to-case Lead Temperature EMAIL: sales@solitrondevices

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N-Channel Power MOSFET - 2 ELECTRICAL CHARACTERISTICS (TC = 25°C) SYMBOL TEST CONDITIONS Drain-Source Breakdown Voltage Gate Threshold Voltage Off -State Drain Current Gate-Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Fall Time Total Gate Charge SOURCE-DRAIN DIODE RATINGS (Tc = 25°C) CHARACTERISTIC TEST CONDITIONS Continuous Source Current Pulsed Source Current Diode Forward Voltatge Reverse Recovery PERFORMANCE CHARACTERISTICS Fig 1: Case Temperature vs. Power Dissipation Fig 3: On-Resistance vs. Junction Temperature Fig 4:...

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Fig 3: On-Resistance vs. Junction Temperature Fig 4: On-Resistance vs. Drain Current Fig 5: Drain-Source Voltage vs. Drain Current Fig 6: Gate-Source Voltage vs. Drain Current N-Channel Power MOSFET - 3 Also available with 90° lead bend, consult factory All Dimensions are in Inches (mm) © 2023 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications are subject to change without notice. Solitron Devices, Inc. • 901 Sansburys Way, West Palm...

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