2N5911 | 2N5912

2N5911 | 2N5912

2N5911 | 2N5912

Product catalog summary
Overview: The document provides technical specifications for the 2N5911 and 2N5912 Dual Matched N-Channel JFETs, designed for wideband differential amplifiers. These components are suitable for military applications due to their hermetically sealed TO-78 package.
Absolute Maximum Ratings:
  • Reverse Gate Source and Gate Drain Voltage: -25 V
  • Continuous Forward Gate Current: 50 mA
  • Continuous Device Power Dissipation: 250 mW
  • Power Derating: 4.3 mW/°C
  • Operating Junction Temperature: -55 to 150 °C
  • Storage Temperature: -65 to 200 °C
Features:
  • Low Noise: 4.0 nV/√Hz typical
  • Low Leakage: 10 pA typical
  • Low Input Capacitance: 5.0 pF typical
Static Characteristics: Typical values at 25°C include:
  • Gate to Source Breakdown Voltage: -25 V
  • Gate to Source Reverse Current: -100 pA at 25°C, -250 nA at 150°C
  • Gate Operating Current: -100 pA at 25°C, -100 nA at 125°C
  • Gate to Source Cutoff Voltage: -1 to -5 V
  • Drain to Source Saturation Current: 7 to 40 mA
Dynamic Characteristics: Typical values at 25°C include:
  • Forward Transconductance: 3000 to 10000 µS
  • Output Conductance: 100 to 150 µS
  • Input Capacitance: 5 pF
  • Reverse Capacitance: 1.2 pF
  • Noise Figure: 1 dB
  • Equivalent Circuit Input Noise Voltage: 20 nV/√Hz
Additional Specifications:
  • Differential Gate Current: 20 nA
  • Saturation Drain Current Ratio: 0.95 to 1
  • Differential Gate Source Voltage: 10 to 15 mV
  • Transconductance Ratio: 0.95 to 1
Ordering Information: Part numbers 2N5911 and 2N5912 are available with custom specifications and packaging options. TX, TXV, and S-Level Screening are available upon consultation with the factory.
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Catalog excerpts

2N5911 | 2N5912-1

Dual Matched N-Channel JFET - 1 FEATURES LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL Gate DESCRIPTION The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available - Consult Factory. ORDERING GUIDE Part Number 2N5911, 2N5912 Description -25V Dual Matched N-Channel JFET ABSOLUTE MAXIMUM RATINGS Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Operating Junction Temperature Reverse Gate Source and Gate Drain Voltage Storage Temperature EMAIL: sales@solitrondevi

 Open the catalog to page 1
2N5911 | 2N5912-2

Dual Matched N-Channel JFET - 2 STATIC CHARACTERISTICS Typical @ 25°C unless otherwise noted. Symbol V(BR)GSS Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate Operating Current Gate to Source Cutoff Voltage Gate Source Voltage Drain to Source Saturation Current DYNAMIC CHARACTERISTICS Typical @ 25°C unless otherwise noted. Forward Transconductance Output Conductance Input Capacitance Reverse Capacitance Noise Figure Equivalent Circuit Input Noise Voltage Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source Voltage...

 Open the catalog to page 2

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