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2N4416 | 2N4416A

2N4416 | 2N4416A

2N4416 | 2N4416A

Product catalog summary
Overview: The document provides technical specifications for the 2N4416 and 2N4416A N-Channel JFETs, designed for sensitive mixer and VHF amplifier applications. The 2N4416A variant offers a higher breakdown voltage.
Specifications:
  • Package: TO-72, hermetically sealed, suitable for military applications.
  • Maximum Ratings:
    • Reverse Gate Source and Gate Drain Voltage: -30V (2N4416), -35V (2N4416A)
    • Continuous Forward Gate Current: 10 mA
    • Device Power Dissipation: 300 mW
    • Operating Junction Temperature: -55 to 125 °C
    • Storage Temperature: -65 to 150 °C
Static Characteristics:
  • Gate to Source Breakdown Voltage: -30V (2N4416), -35V (2N4416A)
  • Gate to Source Reverse Current: -0.1 nA at 25°C, -0.1 µA at 150°C
  • Gate to Source Cutoff Voltage: -6 to -2.5 V
  • Drain to Source Saturation Current: 5 to 15 mA
Dynamic Characteristics:
  • Forward Transconductance: 4500 to 7500 µS
  • Output Conductance: 50 to 100 µS
  • Input Capacitance: 4 pF
  • Output Capacitance: 2 pF
  • Reverse Transfer Capacitance: 0.8 pF
  • Power Gain: 18 dB at 100MHz, 10 dB at 400MHz
  • Noise Figure: 2 dB at 100MHz, 4 dB at 400MHz
Features:
  • Low Noise: 4 NV/√HZ typical
  • Low Leakage: 10PA typical
Ordering Information: Available as 2N4416 or 2N4416A, with TX, TXV, and S-Level Screening options.
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Catalog excerpts

2N4416 | 2N4416A-1

FEATURES LOW NOISE: 4 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL The -30V 2N4416 and 2N4416A are targeted for sensitive mixer and VHF amplifier designs. Gate leakages are typically less than 10pA at room temperatures. The “A” variant has a higher breakdown Voltage of -35V. The TO-72 package is hermetically sealed and suitable for military applications. Bottom View TX, TXV, and S-Level Screening Available - Consult Factory. ORDERING GUIDE Part Number 2N4416 or 2N4416A Description ABSOLUTE MAXIMUM RATINGS Reverse Gate Source and Gate Drain Voltage Continuous Device Power Dissipation Power Derating Operating Junction Temperature Storage Temperature Continuous Forward Gate Current EMAIL: sales@solitrond

 Open the catalog to page 1
2N4416 | 2N4416A-2

STATIC CHARACTERISTICS Typical @ 25°C unless otherwise noted Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate to Source Cutoff Voltage Drain to Source Saturation Current DYNAMIC CHARACTERISTICS Typical @ 25°C unless otherwise noted Forward Transconductance Output Conductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Input Conductance Input Susceptance Output Susceptance Power Gain Noise Figure © 2023 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences...

 Open the catalog to page 2

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