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2N4391 | 2N4392 | 2N4393

2N4391 | 2N4392 | 2N4393

2N4391 | 2N4392 | 2N4393

Product catalog summary
Overview: The document provides technical specifications for the 2N4391, 2N4392, and 2N4393 N-Channel JFETs, which are designed for switch, chopper, and commutator applications. These devices are characterized by low noise, fast switching, and low cutoff voltage, making them suitable for low-level power supplies and military applications.
Specifications:
  • Absolute Maximum Ratings: Reverse Gate Source and Gate Drain Voltage: -40V, Continuous Forward Gate Current: 50mA, Continuous Device Power Dissipation: 1800mW, Operating Junction Temperature: -55 to 125°C, Storage Temperature: -65 to 150°C.
  • Static Characteristics: Gate to Source Breakdown Voltage: -40V, Gate to Source Cutoff Voltage ranges from -4V to -0.5V depending on the model, Drain to Source Saturation Current ranges from 5mA to 150mA.
  • Dynamic Characteristics: Drain to Source ON Resistance: 30 to 100Ω, Input Capacitance: 14pF, Turn-On Delay Time: 15ns, Turn-Off Delay Time: 20 to 50ns.
Features: The JFETs exhibit low noise (1.2 NV/√HZ typical), fast switching capabilities, and a low cutoff voltage, particularly the 2N4393 model with less than 3.0V.
Package and Applications: The devices are housed in a hermetically sealed TO-18 package, suitable for military applications. TX, TXV, and S-Level Screening are available upon consultation with the factory.
Ordering Information: The document lists the part numbers 2N4391, 2N4392, and 2N4393, all described as -40V N-Channel JFETs.
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Catalog excerpts

2N4391 | 2N4392 | 2N4393-1

FEATURES LOW NOISE: 1.2 NV/√HZ TYPICAL FAST SWITCHING The -40V 2N4391, 2N4392 and 2N4393 are targeted for switch, chopper and commutator designs. Gate leakages are typically less than 50pA at room temperatures. The 2N4393 has a cutoff voltage of less than 3.0V ideal for lowlevel power supplies. The TO-18 package is hermetically sealed and suitable for military applications. ORDERING GUIDE TX, TXV, and S-Level Screening Available - Consult Factory. Part Number 2N4391, 2N4392, 2N4393 Description ABSOLUTE MAXIMUM RATINGS Reverse Gate Source and Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Operating Junction Temperature 0.030 (0.76) max Storage Temperature EMAIL: sales@solitrondevi

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2N4391 | 2N4392 | 2N4393-2

STATIC CHARACTERISTICS Typical @ 25°C unless otherwise noted, highlighted values = A version. Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate to Source Cutoff Voltage Gate to Source Forward Voltage Drain to Source Saturation Current VGS = 0V, ID = 12mA Static Drain to Source ON Resistance VGS = 0V, ID = 1mA VGS = 0V, ID = 3mA Drain to Source ON Voltage VDS = 20V, VGS = -5V, TA = 25°C VDS = 20V, VGS = -5V, TA = 150°C Drain Cutoff Current DYNAMIC CHARACTERISTICS Typical @ 25°C unless otherwise noted Drain to Source ON Resistance Input Capacitance VDS = 0V, VGS = -5V, f = 1MHz...

 Open the catalog to page 2

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