2N4338 | 2N4339
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FEATURES LOW NOISE: 4.2NV/√HZ TYPICAL HIGH GAIN: 1.6MS TYPICAL (2N4339) DESCRIPTION The -50V 2N4338 and 2N4339 are targeted for sensitive amplifier stages for mid-frequencies designs. Gate leakages are typically less than 10pA at room temperatures. The 2N4338 has a cutoff voltage of less than 1.0V ideal for lowlevel power supplies. The TO-18 package is hermetically sealed and suitable for military applications. ORDERING GUIDE TX, TXV, and S-Level Screening Available - Consult Factory. Part Number 2N4338, 2N4339 Description ABSOLUTE MAXIMUM RATINGS Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Operating Junction Temperature Reverse Gate Source and Gate Drain Voltage Storage Temperature SEATING PLATE EMAIL: sales@solitrondevi

STATIC CHARACTERISTICS Typical @ 25°C unless otherwise noted, highlighted values = A version. Gate to Source Breakdown Voltage Gate to Source Reverse Current Drain to Source Saturation Current Gate to Source Cutoff Voltage Drain Cutoff Current Forward Diode Voltage DYNAMIC CHARACTERISTICS Typical @ 25°C unless otherwise noted Forward Transconductance Drain to Source ON Resistance Input Capacitance Reverse Transfer Capacitance Noise Figure TYPICAL PERFORMANCE CHARACTERISTICS Drain to Source Voltage, VDS (V) Drain to Source Voltage, VDS (V) Solitron Devices, Inc. • 901 Sansburys Way, West...

Gate to Source Voltage, VGS (V) Input Capacitance, CrSS (pF) Gate to Source Voltage, VGS(OFF) (V) Typical Noise (nV/√Hz) VGS = 0V ID = 0A f = 1kHz Gate to Source Voltage, VGS(OFF) (V) Noise Voltage, en(nV/√Hz) Input Capacitance, CiSS (pF) Typical IDSS - VGS(OFF) VDS = 15V Drain to Source Voltage, VDS (V) Typical RDS(ON) - VGS(OFF) Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS(OFF) (V) Gate to Source Voltage, VGS (V) © 2024 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences...