2N4117/A | 2N4118/A | 2N4119/A

Product catalog summary

Overview: The document provides technical specifications and performance characteristics for the 2N4117/A, 2N4118/A, and 2N4119/A N-Channel JFETs, designed for ultra-high input impedance applications in mid to high-frequency designs. These JFETs are suitable for military applications due to their hermetically sealed TO-72 package.

Specifications:

Reverse Gate Source and Gate Drain Voltage (VRGS): -40 V
Continuous Forward Gate Current (IFG): 50 mA
Continuous Device Power Dissipation (PD): 300 mW
Operating Junction Temperature (TJ): -55 to 125 °C
Storage Temperature (TSTG): -65 to 150 °C

Features:

Low leakage: 0.25 pA typical
Low input capacitance: 2.0 pF typical
High input impedance

Static Characteristics: Typical values at 25°C include:

Gate to Source Breakdown Voltage (V(BR)GSS): -40 V
Gate to Source Reverse Current (IGSS): -10 pA max
Gate to Source Cutoff Voltage (VGS(OFF)): Ranges from -0.6 to -6 V depending on the model
Drain to Source Saturation Current (IDSS): Ranges from 0.03 to 0.6 pA depending on the model

Dynamic Characteristics: Typical values at 25°C include:

Forward Transconductance (GFS): Ranges from 70 to 330 µS depending on the model
Output Conductance (GOS): 3 to 10 µS
Input Capacitance (Ciss): 3 pF
Reverse Transfer Capacitance (Crss): 1.5 pF

Performance Graphs: The document includes various graphs illustrating typical performance characteristics such as IDSS vs. VGS(OFF), output characteristics at different VGS(OFF) values, and transconductance vs. VGS(OFF).

Ordering Information: Part numbers include 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, and 2N4119A, all described as -50V N-Channel JFETs.

Catalog excerpts

FEATURES LOW LEAKAGE: 0.25 PA TYPICAL LOW INPUT CAPACITANCE: 2.0 PF TYPICAL HIGH INPUT IMPEDANCE The -50V 2N4117/A, 2N4118/A, and 2N4119/A JFET’s are targeted for ultra high input impedance applications for mid to high frequency designs. Gate leakages are typically 1pA at room temperatures. TX, TXV, and S-Level Screening Available - Consult Factory. Bottom View ORDERING GUIDE Part Number 2N4117, 2N4117A, 2N4118, 2N4118A, 2N4119, 2N4119AA Description ABSOLUTE MAXIMUM RATINGS Reverse Gate Source and Gate Drain Voltage Continuous Device Power Dissipation Power Derating Operating Junction Temperature 0.030 (0.76) max Storage Temperature Continuous Forward Gate Current The 2N4117 has a cutoff voltage of less than 1.8V ideal for lowlevel power supplies. The TO-72 package is hermetically sealed and suitable for military applications. EMAIL: sales@solitrondevic

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STATIC CHARACTERISTICS Typical @ 25°C unless otherwise noted, highlighted values = A version. Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate to Source Cutoff Voltage Drain to Source Saturation Current DYNAMIC CHARACTERISTICS Typical @ 25°C unless otherwise noted Forward Transconductance Output Conductance Input Capacitance Reverse Transfer Capacitance TYPICAL PERFORMANCE CHARACTERISTICS Typical Output @ VGS(OFF) = -0.8V Typical Output @ VGS(OFF) = -1.5V Drain to Source Voltage, VDS (V) Drain to Source Voltage, VDS (V) Typical Output @ VGS(OFF) = -2.5V Typical Output @ VGS(OFF)...

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Gate to Source Voltage, VGS(OFF) (V) Gate to Source Voltage, VGS (V) Input Capacitance, CrSS (pF) Typical Noise (nV/√Hz) VGS = 0V f = 1kHz Gate to Source Voltage, VGS(OFF) (V) Noise Voltage, en (nV/√Hz) Typical RDS(ON) vs. VGS(OFF) 30 Gate to Source Voltage, VGS(OFF) (V) Typical GFS vs. VGS(OFF) Transconductance, GFS (µS) Drain to Source Voltage, VDS (V) Gate to Source Voltage, VGS (V) © 2023 Solitron Devices, Inc. This document is believed to be correct at the time of publication and Solitron Devices accepts no responsibility for consequences from printing errors or inaccuracies. All specifications...

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2N4117/A | 2N4118/A | 2N4119/A

2N4117/A | 2N4118/A | 2N4119/A

Catalog excerpts

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