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Silicon Carbide (SiC) Power Modules

Silicon Carbide (SiC) Power Modules

Silicon Carbide (SiC) Power Modules

Product catalog summary
Overview: This document provides technical specifications for various Silicon Carbide (SiC) power modules produced by GE Aviation Conversion and Control Systems. These modules are designed for environmentally demanding applications and are manufactured at a state-of-the-art facility in Pompano Beach, Florida.
Specifications:
  • Rectifier GE06530GAF4: Current per switch: 750A, Voltage rating: 650V, Cooling system: Dry Interface, Max junction temp: 150°C, Size: 102.9mm x 68.6mm x 15.5mm.
  • Dual 200A GE12020FCA3: Current per switch: 200A, Voltage rating: 1200V, Cooling system: Dry Interface, Max junction temp: 175°C, Size: 89mm x 51mm x 25mm.
  • Dual 250A GE17040BCA3: Current per switch: 250A, Voltage rating: 1200/1700V, Cooling system: Dry Interface, Max junction temp: 175°C, Size: 89mm x 51mm x 25mm.
  • 1/2 Bridge 60A GE12006CAE3: Current per switch: 60A, Voltage rating: 1200V, Cooling system: Integrated Millichannel, Max junction temp: 175°C, Size: 133.6mm x 90.4mm x 29.5mm.
  • 1/2 Bridge 600A GE12060CEA3: Current per switch: 600A, Voltage rating: 1200V, Cooling system: Integrated Millichannel, Max junction temp: 175°C, Size: 133.6mm x 90.4mm x 29.5mm.
  • 1200A SSPC GE12040FEA3: Current per switch: 6 x 400A, Voltage rating: 1200V, Cooling system: Integrated Millichannel, Max junction temp: 175°C, Size: 133.6mm x 90.4mm x 37mm.
  • 250A 3-Phase GE12040EEB3: Current per switch: 3 x 400A, Voltage rating: 1700V, Cooling system: Integrated Millichannel, Max junction temp: 175°C, Size: 133.6mm x 90.4mm x 37mm.
Contact Information: For more information and pricing, contact Tony Codispoti at [email protected] or call 1-954-984-2472. GE Aviation is located at 2705 Gateway Drive, Pompano Beach, Florida 33069 USA, and 1000 MacArthur Highway, Bohemia, New York 11716 USA.
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Catalog excerpts

Silicon Carbide (SiC) Power Modules-1

Silicon Carbide (SiC) Power Modules GE Aviation Conversion and Control Systems -SiC power modules are produced at the State-of-the-Art, Wide Band Gap development and manufacturing facility in Pompano Beach, Florida. For more information and pricing on standard and custom designed modules for environmentally demanding applications, contact: Tony Codispoti ([email protected]) PH: 1-954-984-2472, Mobile: 1-954-531-5620

 Open the catalog to page 1
Silicon Carbide (SiC) Power Modules-2

GE Aviation 2705 Gateway Drive Pompano Beach, Florida 33069 USA 954-984-7000 1000 MacArthur Highway Bohemia, New York 11716 USA 631-467-5500

 Open the catalog to page 2

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*Prices are pre-tax. They exclude delivery charges and customs duties and do not include additional charges for installation or activation options. Prices are indicative only and may vary by country, with changes to the cost of raw materials and exchange rates.