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2N5911 | 2N5912

2N5911 | 2N5912
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Dual Matched N-Channel JFET - 1 FEATURES LOW NOISE: 4.0 NV/√HZ TYPICAL LOW LEAKAGE: 10PA TYPICAL LOW INPUT CAPACITANCE: 5.0 PF TYPICAL Gate DESCRIPTION The -25V 2N5911 and 2N5912 JFET’s are targeted for wideband differential amplifiers. Gate leakages are less than 10pA at room temperatures. The TO-78 package is hermetically sealed and suitable for military applications. Custom specifications, matching, and packaging options are available. TX, TXV, and S-Level Screening Available - Consult Factory. ORDERING GUIDE Part Number 2N5911, 2N5912 Description -25V Dual Matched N-Channel JFET ABSOLUTE MAXIMUM RATINGS Continuous Forward Gate Current Continuous Device Power Dissipation Power Derating Operating Junction Temperature Reverse Gate Source and Gate Drain Voltage Storage Temperature EMAIL: sales@solitrondevi

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Dual Matched N-Channel JFET - 2 STATIC CHARACTERISTICS Typical @ 25°C unless otherwise noted. Symbol V(BR)GSS Gate to Source Breakdown Voltage Gate to Source Reverse Current Gate Operating Current Gate to Source Cutoff Voltage Gate Source Voltage Drain to Source Saturation Current DYNAMIC CHARACTERISTICS Typical @ 25°C unless otherwise noted. Forward Transconductance Output Conductance Input Capacitance Reverse Capacitance Noise Figure Equivalent Circuit Input Noise Voltage Differential Gate Current Saturation Drain Current Ratio Differential Gate Source Voltage Differential Gate Source...

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